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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1341 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min) *High DC Current Gain: hFE= 1000(Min)@ (VCE= -3V, IC= -2A) APPLICATIONS *Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w -80 V -80 V -7 V -4 A -6 A 2 W 35 .cn mi e ICM Collector Current-Peak Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain--Bandwidth Product CONDITIONS IC= -1mA; IB= 0 B 2SB1341 MIN -80 -80 TYP. MAX UNIT V V IC= -50A; IE= 0 IC= -2A; IB= -4mA B -1.5 -100 -3 1000 10000 45 12 V A VCB= -80V ; IE= 0 VEB= -5V; IC= 0 mA w w. w .cn mi cse is IC= -2A ; VCE= -3V IE= 0; VCB= -10V; ftest= 1MHz IE= 0.5A ; VCE= -5V; ftest= 10MHz pF MHz isc Websitewww.iscsemi.cn 2 |
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